Process for forming field isolation

Details Process for forming field isolation Process for forming field isolation

1997-10-14

1999-11-16

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438448, H01L 21762

Patent

active

059857366

ABSTRACT:
Field isolation regions are formed using oxidation-resistant spacers or plugs that completely fill trenches within a semiconductor substrate prior to forming the field isolation regions. The spacers or plugs help to reduce encroachment of the field isolation regions under the spacers or plugs. The structure used as an oxidation mask for the field isolation process may include a silicon-containing member that is thicker than an overlying oxidation-resistant member. The thicker silicon-containing member may be capable of tolerating higher stress before defects in an underlying pad layer or substrate are formed.

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Wolf, S., Silicon Processing for the VLSI Era: vol. 2, Process Integration, Lattice Press, 1990, p. 23.
Ghezzo, et al.; "Laterally Sealed LOCOS Isolation"; J. Electrochemical Society; Solid-State Science and Technology; pp. 1475-1479 (1987).
Chiu; "SWAMI: A Zero-Encroachment Local Oxidation Process"; Hewlett-Packard Journal; pp. 31-32 (1982).

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