Process for forming features of 50 nm or less half-pitch...

Details Process for forming features of 50 nm or less half-pitch... Process for forming features of 50 nm or less half-pitch...

2006-08-15

2006-08-15

McPherson, John A. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S330000, C430S322000, C430S325000, C430S323000, C430S324000

Reexamination Certificate

active

07090963

ABSTRACT:
Lithographic imaging of 50 nm (or less) half-pitch features in chemically amplified resists (commonly used in the manufacture of integrated circuits) is enabled by the use of reduced temperature post-exposure processing and low activation energy chemically amplified resists. The post-exposure processing preferably involves ambient to moderately elevated temperature and the presence of a deprotection reaction-dependent co-reactant (e.g., water).

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