Process for forming deposited film

Details Process for forming deposited film Process for forming deposited film

1991-03-11

1992-08-04

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156662, 427 38, 427 70, 427255, 4272552, C23C 1600

Patent

active

051356074

ABSTRACT:
A process for forming a crystalline deposited film on a substrate surface by preparing the substrate surface on which spaced crystal nuclei are present for forming the crystalline deposited film, forming the crystalline deposited film by introducing an activated species (A) formed decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance for film formation which is chemically mutually reactive with the activated species (A) whereby a mixture is formed between the two activated species to cause a chemical reaction therebetween and thereby affect the formation of the crystalline deposited film. An etching action is thereafter produced on the crystalline deposited film by exposing the film to a gaseous substance (B) capable of effecting an etching action to effect crystal growth in specific face direction.

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Jastrzebski et al., "Growth Process . . . Overgrowth Technique" J of Electro Chem. Soc. vol. 130 No. 7 Jul. 1983 pp. 1571-1580.

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