Process for forming an ultra fine pattern using a bottom...

Details Process for forming an ultra fine pattern using a bottom... Process for forming an ultra fine pattern using a bottom...

2007-06-26

2007-06-26

Walke, Amanda (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S270100, C430S330000, C430S913000, C430S311000, C430S918000, C430S919000

Reexamination Certificate

active

11321126

ABSTRACT:
A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.

REFERENCES:
patent: 5212043 (1993-05-01), Yamamoto et al.
patent: 5750680 (1998-05-01), Kim et al.
patent: 6051678 (2000-04-01), Kim et al.
patent: 6132926 (2000-10-01), Jung et al.
patent: 6143463 (2000-11-01), Jung et al.
patent: 6150069 (2000-11-01), Jung et al.
patent: 6180316 (2001-01-01), Kajita et al.
patent: 6225020 (2001-05-01), Jung et al.
patent: 6235447 (2001-05-01), Lee et al.
patent: 6235448 (2001-05-01), Lee et al.
patent: 6323287 (2001-11-01), Foster et al.
patent: 6355400 (2002-03-01), Tanaka et al.
patent: 6461776 (2002-10-01), Tanaka et al.
patent: 6610808 (2003-08-01), De et al.
patent: 6627384 (2003-09-01), Kim et al.
patent: 0789 278 (1997-08-01), None
patent: 0 794 458 (1997-10-01), None
patent: 2340830 (2000-03-01), None
patent: 2345286 (2000-07-01), None
patent: WO 96/37526 (1996-11-01), None
patent: WO 97/33198 (1997-09-01), None

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