Process for forming an integrated structure comprising a self-al

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438624, 438976, H01L 2144

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058888977

ABSTRACT:
A method of forming an integrated structure that comprises a self-aligned via/contact and metal line is described. The via/contact is formed out of part of a first spacer made of a first dielectric and surrounded by a second dielectric in a first sandwich structure. The metal line is formed out of a second spacer made of the first dielectric and surrounded by the second dielectric in a second sandwich structure. The second sandwich structure is disposed over the first sandwich structure. At the point of contact between the first and second spacer, an angle of 90.degree. exists in a preferred embodiment. The via/contact and metal line form a self-aligned integrated structure that is created in one etch step. The integrated structure is subsequently filled with a conductive material.

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