Process for forming an integrated circuit

Details Process for forming an integrated circuit Process for forming an integrated circuit

1986-03-04

2000-07-11

Miller, Edward A.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438725, 216 48, 216 55, B44C 122, C03C 1500

Patent

active

060872675

ABSTRACT:
A process for selectively plasma etching polycrystalline silicon or polysilicon in preference to silicon dioxide which minimizes the detrimental effect of carbon. It has been discovered that carbon from the plasma etch chemicals or from photoresist present interferes disadvantageously with the selective plasma etch of polysilicon as opposed to silicon dioxide. By heat treating and deep ultraviolet light treating the photoresist prior to the plasma etch step and by using non-carbon etch chemicals, this detrimental carbon effect can be reduced.

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