Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-03-15
2008-11-25
Kebede, Brook (Department: 2894)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S197000, C438S198000, C438S199000, C257S351000, C257S401000, C257SE27108, C257SE29137
Reexamination Certificate
active
07456055
ABSTRACT:
An electronic device can include a base layer, a semiconductor layer, and a first semiconductor fin spaced apart from and overlying a semiconductor layer. In a particular embodiment, a second semiconductor fin can include a portion of the semiconductor layer. In another aspect, a process of forming an electronic device can include providing a workpiece that includes a base layer, a first semiconductor layer that overlies and is spaced apart from a base layer, a second semiconductor layer that overlies, and an insulating layer lying between the first semiconductor layer and the second semiconductor layer. The process can also include removing a portion of the second semiconductor layer to form a first semiconductor fin, and forming a conductive member overlying the first semiconductor fin.
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Orlowski Marius K.
Venkatesan Suresh
Freescale Semiconductor Inc.
Kebede Brook
Tran Tony
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