Process for forming a thin film of TiSiN, in particular for...

Details Process for forming a thin film of TiSiN, in particular for... Process for forming a thin film of TiSiN, in particular for...

2007-08-07

2007-08-07

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21302

Reexamination Certificate

active

10853015

ABSTRACT:
The process for forming a film of TiSiN includes the following sequence of steps: deposition of a TiN film at medium temperature, for example, 300-450° C., by thermal decomposition of a metallorganic precursor, for example TDMAT (Tetrakis Dimethylamino Titanium); exposition to a silicon releasing gas, such as silane (SiH4) and dichlorosilane (SiH2Cl2) at 10-90 sccm—standard cube centimeters per minute—for a quite long time, for example, longer than 10 s but less than 90 s, preferably about 40 s; exposition to a H2/N2plasma at 200-800 sccm, for 10-90 s, preferably about 40 s.

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