Process for forming a thin film of silicon

Details Process for forming a thin film of silicon Process for forming a thin film of silicon

1993-01-12

1994-03-15

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156611, 156613, 156614, 156DIG64, 156DIG80, 437108, 437241, 4272551, C30B 2514

Patent

active

052942864

ABSTRACT:
The thickness of a thin film of an element semiconductor may be determined by counting the number of cycles of gaseous component introductions within a crystal growth vessel. Each cycle permits at most one monolayer of growth since the pressure in the vessel during gaseous component introduction is maintained under a saturation condition. The temperature to which a substrate in the vessel is heated is that for which epitaxial growth results.

REFERENCES:
patent: 2841477 (1958-07-01), Hall
patent: 3901746 (1975-08-01), Boucher
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4160690 (1979-07-01), Shibagaki et al.
patent: 4190470 (1980-02-01), Walline
patent: 4223048 (1980-09-01), Engle, Jr.
patent: 4277304 (1981-07-01), Horiike et al.
patent: 4368098 (1983-01-01), Manasevit
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4435445 (1984-03-01), Allred et al.
patent: 4504331 (1985-03-01), Kuech et al.
patent: 4522674 (1985-06-01), Ninomiya et al.
patent: 4529617 (1985-07-01), Chenevas-Paule et al.
patent: 4540466 (1985-09-01), Nishizawa
patent: 4558660 (1985-12-01), Nishizawa et al.
patent: 4624736 (1986-11-01), Gee et al.
patent: 4645687 (1986-09-01), Donnelly et al.
patent: 4699688 (1987-10-01), Shastry
patent: 4806321 (1989-02-01), Nishizawa et al.
patent: 4834831 (1989-05-01), Nishizawa et al.
patent: 4975252 (1990-12-01), Nishizawa et al.
patent: 4993357 (1991-02-01), Scholtz
patent: 5082798 (1992-01-01), Arimoto
patent: 5225366 (1993-07-01), Yoder
patent: 5246536 (1993-09-01), Nishizawa et al.
M. Pessa et al., "Characterization of surface exchange reactions used to grow compound films", Appl. Phys. Lett. 38(3), Feb. 1, 1981, pp. 131-132.
M. Pessa et al., "Atomic Layer epitaxy and characterization of CdTe films grown on CdTe (110) substrates", J. Appl. Phys. 54(10), Oct. 1983, pp. 6047-6050.
M. Pessa et al., "Atomic Layer Epitaxy of CdTe on the Polar (111)A and (111)B Surfaces of CdTe Substrates", Journal of Crystal Growth 67 (1984), pp. 255-260.
M. Ahonen et al., "A Study of ZnTe Films Growth on Glass Substrates Using an Atomiclayer Evaporation Method", Thin Solid Films, 65 (1980) 301-307.
Jun-ichi Nishizawa, "Doping in Molecular Layer Epitaxy", Reprinted from Journal of the Electro Chemical Society, vol. 136, No. 2, Feb. 1989, pp. 478-484.
S. M. Bedair et al., "Atomic layer epitaxy of III-V binary compounds", Appl. Phys. Lett., vol. 47, No. 1, Jul. 1, 1985, pp. 51-53.
Lewis M. Fraas, "A new low temperature III-V multilayer growth technique: Vacuum metalorganic chemical vapor deposition", J. Appl. Phys. 52(11), Nov. 1981, pp. 6939-6943.
Theodore L. Brown, "General Chemistry", .sctn. 17-2, "The Effect of External Variables on the Value of the Equilibrium Constant", pp. 278-282, 1963.
G. M. Guro et al., "Activation of the Growth of Epitaxial Layers of Narrow-Band Semiconductors by Light Radiation", Sov. Phys.-Lebedev Inst. Rep. (USA), 1978, pp. 22-26.
P. Daniel Dapkus, "Metalorganic Chemical Vapor Deposition", Ann Rev Mater Sci, 1982, pp. 243 & 259.
Jun-ichi Nishizawa et al., "Molecular Layer Epitaxy in Gallium Arsenide", ACTA Polytechnica Scandinavia, Chemical Technology and Metallurgy Series No. 195, UDC 539.23:541.17:621.315.59, 1st International Symposium of Atomic Layer Epitaxy, 1990, pp. 1-15.
John F. O'Hanlon, "A User's Guide to Vacuum Technology" in Japanese, Jul. 30, 1958, pp. 65-91.
Irving Langmuir, "The Adsorption of Gases on Plane Surfaces of Glass, Mica and Platinum", The Journal of the American Chemical Society, vol. XL, Jul.-Dec. 1918, pp. 1361-1403.
James W. McBain et al., "The Nature of the Sorption by Charcoal of Gases and Vapors Under Great Pressure", The Journal of the American Chemical Society, vol. 52, No. 5, May 1930, pp. 2198-2222.
Stephen Brunauer et al., "The Use of Low Temperature van der Waals Adsorption Isotherms in Determining the Surface Areas of Various Adsorbents", The Journal of the American Chemical Society, vol. LIX, 1937, pp. 2682-2689.
Jun-ichi Nishizawa et al., "Silicon Molecular Layer Epitaxy", J. Electrochem. Soc. vol. 137, No. 6, Jun. 1990, pp. 1898-1904.
Jun-ichi Nishizawa et al., "Molecular Layer Epitaxy of Silicon", Journal of Crystal Growth 99 (1990) pp. 502-505.
Kenji Aoki et al., "Silicon Molecular Layer Epitaxy", Denshi Tokyo No. 30 (1991), pp. 33-37.
Jun-ichi Nishizawa et al., "Surface reaction mechanism in Si and GaAs crystal growth", Surface Science Reports, review journal, vol. 15, Nos. 4/5, 1992 pp. 137-204.
Tohru Kurabayashi et al., "Photoexcited Molecular Layer Epitaxial Growth Process of GaAs, GaAlAs, and Si; and Photo-Vapor Phase Epitaxy of GaAs", Project for Promoting the Development of Creative Science & Technology, Research Development Corporation of Japan, Nishizawa Project on Perfect Crystals, Dec. 19, 1986, pp. 2-7.
Irving Langmuir, "The Constitution and Fundamental Properties of Solids and Liquids", The Journal of the American Chemical Society, vol. XXXVIII, Jul.-Dec. 1916, pp. 2221-2295.

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