Process for forming a sputter deposited metal film

Details Process for forming a sputter deposited metal film Process for forming a sputter deposited metal film

1993-10-04

1994-10-25

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 20429812, 20429813, 20429811, 437192, 437196, C23C 1434

Patent

active

053586158

ABSTRACT:
A metal deposition process in which a high-purity metal film (46) is sputter deposited within a sputtering system (10) having insitu passivated metal components. A sputtering target (14) is provided having a thin aluminum coating (44) overlying a refractory metal layer (42). During operation, the aluminum coating (44) is sputtered away from the target (14) and onto exposed metal surfaces within the vacuum chamber (20) of the sputter deposition system (10). Subsequently, a semiconductor substrate (38) is placed in the sputter deposition system (10) and a high-purity metal film (46) is deposited onto the semiconductor substrate (38). Because the insitu passivation process avoid the oxidation of the passivating aluminum, refractory metal sputtered away from the target (14) adheres to the passivating aluminum layer, and does not re-deposit onto the surface of the semiconductor substrate (38) during the sputter deposition process.

REFERENCES:
patent: 4964969 (1990-10-01), Kusakabe et al.
patent: 5118661 (1992-06-01), Maeda
patent: 5155063 (1992-10-01), Ito
patent: 5190630 (1993-03-01), Kikuchi et al.
patent: 5282943 (1994-02-01), Lannutti et al.

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