Process for forming a semiconductor device having a conductive m

Details Process for forming a semiconductor device having a conductive m Process for forming a semiconductor device having a conductive m

1996-12-23

1999-10-12

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438297, 438647, 438649, 438664, 438682, H01L 2128, H01L 2170, H01L 218244

Patent

active

059666196

ABSTRACT:
A semiconductor device (150) is formed having a first conductive member (64) overlying a field isolation region (36) that is typically less than two microns wide. Typically, the field isolation region (36) is relatively thinner compared to wider field isolation regions. The first conductive member (64) lies between the field isolation region (36) and a second conductive member (80) to shield the substrate (20). The shielding helps to increase the field threshold voltage of the field device. The invention is particularly useful in double polysilicon process flow used in forming devices operating at a potential higher than V.sub.DD. Examples of these devices include nonvolatile memories and microcontrollers having nonvolatile memory arrays.

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Katsuhiro Shimohigashi, et al., "An n-Well CMOS Dynamic RAM", Apr. 1982 IEEE, vol. ED-29, No. 4 pp. 714-718.

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