Process for forming a semiconductor device

Details Process for forming a semiconductor device Process for forming a semiconductor device

1998-07-27

2000-03-28

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438626, 438239, 438397, H01L 2906

Patent

active

060431466

ABSTRACT:
A buffer film (154, 164) is formed over an underlying film (153, 162) to protect that underlying film (153, 162) from damage during a removal sequence, such as polishing. Scratches, gouging, smearing that can occur to the underlying layer (153, 162) are less likely to occur because of the presence of the buffer film (154, 164). In some embodiments, an insulating film (162) is to be protected. The buffer film (164) is formed over the insulating film (162), and the insulating and buffer films (162 and 164) are patterned. During a subsequent conductive layer polishing operation in an embodiment, most of the buffer film (164) is removed. In still another embodiment, a buffer film (154) is formed over a conductive layer (153) to protect it during "gap fill" process sequence. Although residual portions of the buffer film (154, 164) are usually removed, in some instances, those residual portions can remain if there are no significant adverse affects.

REFERENCES:
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Zurcher, et al; U.S. Appl. No. 08/995,534 filed Dec. 29, 1997.
Kim, et al; U.S. Appl. No. 08/780,113 filed Dec. 26, 1996.

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