Process for forming a semiconductor device

Details Process for forming a semiconductor device Process for forming a semiconductor device

1997-08-22

1999-08-10

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438754, 216 38, 216 89, 134 2, H01L 2100

Patent

active

059358718

ABSTRACT:
A process has been developed for a post-chemical mechanical polishing cleaning/passivting step to remove slurry particles (52) and form a passivating film (64) from a portion of an interconnect material within a conductive layer (42) without attacking the interconnecting material. In one particular embodiment, a solution having a pH greater than the isoelectric point of alumina particles is exposed to the surface of an interconnect material of a conductive layer (42) to passivate a portion of the interconnect material while changing the charge of the slurry particles (52) such that they are repelled away from the surface of the substrate and removed by the cleaning solution, or other cleaning processes.

REFERENCES:
patent: 5525191 (1996-06-01), Maniar et al.
patent: 5770095 (1998-06-01), Sasaki et al.
patent: 5773364 (1998-06-01), Farkas et al.
Vogt, et al., "Plasma Deposited Dielectric Barriers for Cu Metallization", Electrochemical Society Proceedings, vol. 96-12, pp. 613-622 (1996).
Jeon, et al., "Aspects of Alumina Particle Deposition Onto CVD Tungsten Wafers Relevant to Post CMP Cleaning", Electrochemical Society Proceedings, vol. 95-20, pp. 581-588, (1995).

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