Process for forming a semiconductor device

Details Process for forming a semiconductor device Process for forming a semiconductor device

1998-06-01

1999-07-27

Utech, Benjamin

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438693, H01L 2100

Patent

active

059289627

ABSTRACT:
Physical properties of alumina particles in a chemical-mechanical polishing slurry delivery loop (28) are measured using a titration technique (44). Examples of the physical properties include crystallographic phase, surface charge, and surface charge density. The physical properties are correlated to a polishing rate (46). Specification limits are generated using the correlated data (482 and 486). The specification limits are used to determine if no adjustments are required to the polishing parameters (484), if adjustments are required to polishing parameters (488) or if the slurry requires replacement (489). This process can be automated and integrated into a conventional chemical-mechanical polishing processing system (20).

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patent: 5786275 (1998-07-01), Kubo
Sung Kim; U.S. Patent Application 08/780,113 filed Dec. 13, 1996.

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