Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1995-12-15
1999-09-28
Chaudhuri, Olik
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438228, 438625, 438627, H01L 2144, H01L 218238, H01L 214763
Patent
active
059603062
ABSTRACT:
A process for dry etching a passivation layer (42) of a semiconductor device is performed such that a low radio frequency (RF) power step is used when an underlying bond pad (22) is initially exposed and a high RF power step is used after the initial exposure. The process virtually eliminates or reduces the likelihood of bond pad (22) staining, particularly when a polyimide die coat layer (72) is subsequently formed over the semiconductor device (50).
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Ferguson Gregory Steven
Hall Mark D.
Mitchell Joel Patrick
Suryanata Johanes P. D.
Chambliss Alonzo
Chaudhuri Olik
Meyer George R.
Motorola Inc.
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