Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1997-08-28
1999-12-28
Bowers, Charles
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
438628, 438638, 438704, 438711, H01L 21311
Patent
active
060081295
ABSTRACT:
A process for forming via openings (24) between two aluminum-containing interconnects (15) which includes removing a veil material (22) formed during etching of an insulating layer (12), where the veil material (22) is then removed by a combination process of a first dry etch followed by an aqueous organic solvent exposure. The first dry etch uses oxygen containing and fluorine-containing gases, and is performed during the resist removal. This combination process effectively removes the veil (22), even for the heaviest of veil formation, without adversely affecting the insulating layer (12) or the underlying interconnect (15) that includes aluminum. The temperature of the aqueous organic solvent may be reduced, decreasing the amount of volatile organic compound emissions from the solvent while maintaining solvent strength.
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Cumpian Freddie
Darlington William David
Dopp Douglas Jason
Graff Wesley Phillip
Bowers Charles
Chen Jack
Meyer George R.
Motorola Inc.
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