Process for forming a semiconductor device

Details Process for forming a semiconductor device Process for forming a semiconductor device

1997-02-18

1999-07-13

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438780, 438781, H01L 21312

Patent

active

059240059

ABSTRACT:
A low dielectric constant (k) polymer is used for an interlayer dielectric (28) of a semiconductor device (20). Unlike prior art low k polymer materials, a photoresist layer can be deposted directly on interlayer dielectric (28) due to the presence of an in-situ glass layer (32) formed within the interlayer dielectric. Glass layer (32) is formed by silylating the upper surface of the polymer material and then oxygenating the upper surface, for example in a plasma environment in an oxygen atmosphere. Silylation can occur, for example, by implantation, vapor phase diffusion, or liquid phase diffusion of silicon into the upper surface of the polymer. The silylation and oxygenation processes are performed at low temperature and are thus compatible with use of organic polymer films.

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Baik, Ki-Ho, et al. "Liquid phase silylation for the DESIRE process", SPIE vol. 1672 Advanced in Resist Technology and Processing IX, vol. 1672, pp. 362-375. Note that this paper was sent in by applicant for consideration, Mar. 1992..

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