Process for forming a semiconductor device

Details Process for forming a semiconductor device Process for forming a semiconductor device

1997-12-22

1999-04-13

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438687, 438627, 438628, 438643, H01L 2100

Patent

active

058937528

ABSTRACT:
A semiconductor device comprises a substrate (100), first conductive film (22 and 32) over the substrate (100), and a second conductive film (54 and 64) over the first conductive film (22 and 32). The first conductive film includes a refractory metal and nitrogen. The first conductive film has a first portion (22) that lies closer to the substrate and a second portion (32) that lies further from the substrate. The nitrogen percentage for the second portion (32) is lower than the nitrogen atomic percentage for the first portion (22). The second conductive film (54 and 64) includes mostly copper. The combination of portions (22 and 32) within the first conductive film provides a good diffusion barrier (first portion) and has good adhesion (second portion) with the second conductive film (54 and 64).

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