Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1996-05-31
2000-05-02
Quach, T. N.
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
438586, 438649, 438683, H01L 2126, H01L 2128
Patent
active
060572159
ABSTRACT:
In a process for manufacturing a semiconductor device, an N-well, a field oxide film, a gate oxide film and a polysilicon gate electrode are formed on a P-type silicon substrate. Arsenic is ion-implanted into the substrate using the polysilicon gate electrode as a mask, to form N-type diffused source/drain regions. Boron fluoride is ion-implanted into the N-well using the polysilicon gate electrode as a mask, to form P-type diffused source/drain regions. A titanium film is deposited on the whole surface, and a first heat treatment is carried out at a first temperature to form titanium silicide. Metal titanium remaining on the titanium silicide is removed so as to selectively form titanium silicide on the polysilicon gate electrode, the N-type diffused source/drain regions and the P-type diffused source/drain regions. A second heat treatment is carried out on the refractory metal silicide at a second temperature higher than the first temperature. The above mentioned ion-implantation of the arsenic is so carried out that the peak of the concentration of the ion-implanted arsenic is deeper than the depth "t" by which the silicon substrate is consumed or expended by the silicide formation reaction, and the arsenic concentration at the depth "t" is less than 5.times.10.sup.20 cm.sup.-3.
REFERENCES:
patent: 5234847 (1993-08-01), Iranmanesh
patent: 5369055 (1994-11-01), Chung
patent: 5512502 (1996-04-01), Ootsuka et al.
Amano, J., et al., "Arsenic out-diffusion during TiSi2 formation", Appl. Phys. Lett., vol. 44, No. 8, Apr. 15, 1984, pp. 744-746.
Park, H.K. et al., "Effects of ion implantation doping of the formation of TiSi.sub.2 ", J. Vac. Sci. Technol. A, vol. 2, Apr.-Jun. 1984.
Masahiro Shimizu, et al., "A Novel CMOS Structure with Polysilicon Source/Drain (PSD) Transistors by Self-Aligned Silicidation", IEICE Trans. Electron., vol. E76-C, No. 4, Apr., 1993.
NEC Corporation
Quach T. N.
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