Process for forming a ledge-free aluminum-copper-silicon conduct

Details Process for forming a ledge-free aluminum-copper-silicon conduct Process for forming a ledge-free aluminum-copper-silicon conduct

1976-08-23

1977-12-13

Van Horn, Charles E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29590, 29591, 156646, 156656, 156657, 156662, 156665, 204192E, 427 90, 427 93, H01L 21324

Patent

active

040627209

ABSTRACT:
A process is disclosed for forming a ledge-free aluminum-copper silicon conductor structure that is free of the silicon bridging problem which has produced electrical shorting conditions in the prior art. The process comprises the steps of depositing the aluminum-copper metallurgy, depositing a photoresist layer to delineate the shape of the resulting conductors, etching the aluminum copper metallurgy with phosphoric
itric acid, for example, removing the photoresist, evaporating a layer of silicon on the surface of the etched conductor layer, sintering the composite to drive the necessary amount of silicon into the aluminum-copper, and removing the residual silicon layer by a reactive plasma etching technique. The resulting conductor structure is free of silicon bridging.

REFERENCES:
patent: 3777364 (1975-12-01), Schinella et al.
patent: 3795557 (1974-03-01), Jacob
patent: 3871067 (1975-03-01), Bogardus
patent: 3881971 (1975-05-01), Greer et al.
patent: 3918149 (1975-11-01), Roberts
patent: 3942243 (1976-03-01), Murray
patent: 3971684 (1976-07-01), Muto
Tsang, "Forming Thick Metal Silicide for Contact Barrier," IBM Technical Disclosure Bulletin, vol. 19, No. 9, (Feb. 1977), pp. 3383-3385.

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