Process for forming a high density semiconductor device

Details Process for forming a high density semiconductor device Process for forming a high density semiconductor device

1997-07-18

1999-06-01

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, H01L 27108

Patent

active

059090448

ABSTRACT:
A method for forming an integrated circuit device, and the product thereby produced, are disclosed. The disclosed method includes the steps of obtaining a substrate with a patterned gate conductor and cap insulator, forming a dielectric masking layer having at least one opening, and, using the opening in the dielectric masking layer as a mask, forming a trench capacitor which is self-aligned to the cap insulator edge. The method is particularly useful for producing a DRAM device having a dense array region with self-aligned deep trench storage capacitors connected by buried straps.

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