Process for forming a contact electrode

Details Process for forming a contact electrode Process for forming a contact electrode

1996-04-26

1999-09-28

Quach, T. N.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438533, 438639, 438696, H01L 2128

Patent

active

059603127

ABSTRACT:
In the process for removing an insulating film formed at the surface where the semiconductor is exposed at the bottom of the contact with the progress of heat treatment for activation annealing of impurity doped to the semiconductor surface which has been executed after a multilayer insulating film is formed on a semiconductor substrate, a contact region is etched to form a contact aperture which reaches the semiconductor substrate and impurity is doped to the semiconductor substrate surface to form a protection film at the side wall of the aperture, it can be prevented that contact aperture is deformed and ohmic contact is no longer formed easily because the side wall of contact is etched ununiformly. Moreover, it can also be prevented that the contact is enlarged in size.

REFERENCES:
patent: 4641420 (1987-02-01), Lee
patent: 4963511 (1990-10-01), Smith
patent: 5066612 (1991-11-01), Ohba et al.
patent: 5087591 (1992-02-01), Teng
patent: 5194404 (1993-03-01), Nagatomo
patent: 5422308 (1995-06-01), Nicholls et al.
Definition of "Then", The American Heritage Dictionary of the English Language, Third Edition, 1992, Houghton Mifflin, one page.

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