Process for forming a capacitor incorporated in a semiconductor

Details Process for forming a capacitor incorporated in a semiconductor Process for forming a capacitor incorporated in a semiconductor

1997-05-20

2000-11-14

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, 438255, 438396, H01L 218242

Patent

active

061469661

ABSTRACT:
In a process of forming hemi-spherical silicon grains on an amorphous silicon film in accordance with the "crystal nucleation" process, in order to form crystal nuclei on a top surface and a side surface of the amorphous silicon film, SiH.sub.4 is irradiated onto the top and side surfaces of the amorphous silicon film at a stabilized temperature which is lower than, by at least 5.degree. C., an annealing temperature for growing the hemi-spherical silicon grains from the crystal nuclei, with the result that it is possible to suppress or retard the growth of the crystals growing into the amorphous silicon film from a boundary between the amorphous silicon film and an interlayer insulator film. Thereafter, the amorphous silicon film having the crystal nuclei thus formed on the surface thereof is annealed at the annealing temperature so that the hemi-spherical silicon grains are formed on the whole surface of the top and side surfaces of the amorphous silicon film.

REFERENCES:
patent: 5385863 (1995-01-01), Tatsumi et al.
patent: 5691228 (1997-11-01), Ping et al.
patent: 5721171 (1998-02-01), Ping et al.
patent: 5759262 (1998-06-01), Weimer et al.
patent: 5770500 (1998-06-01), Batra et al.
British Search Report, dated Jul. 30, 1997.

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