Process for formation of LDD transistor, and structure thereof

Details Process for formation of LDD transistor, and structure thereof Process for formation of LDD transistor, and structure thereof

1993-01-22

1993-11-16

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257345, 257409, H01L 2910, H01L 2978

Patent

active

052626644

ABSTRACT:
A process for formation of an LDD transistor and a structure thereof are disclosed in which the junction capacitance and the body effect can be properly reduced. In the conventional LDD transistors, the punch-through problem is serious, and in the improved conventional LDD transistor also, there is a limit in increaseing the channel concentration, as well as the body effect being increased. The present invention gives solutions to the above problems by arranging that the junction thicknesses of n.sup.+ source and drain become smaller than the junction thicknesses of n.sup.- regions, and that a p type pocket 6 be formed only near a gate and a p type pocket 6.

REFERENCES:
patent: 4771014 (1988-09-01), Liou et al.
patent: 4968639 (1990-11-01), Bergonzoni
patent: 5023190 (1991-06-01), Lee et al.
patent: 5061649 (1991-10-01), Takenouchi et al.
patent: 5102816 (1992-04-01), Manukonda et al.

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