Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Patent
1997-07-11
1998-09-01
Niebling, John
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
438659, 438661, 438664, 438683, H01L 2128
Patent
active
058010866
ABSTRACT:
A method for forming a contact between a conductive layer and a portion of the substrate during manufacture of a semiconductor device is disclosed. The process includes the steps of: (a) covering a semiconductor substrate with an insulating layer, and forming a contact hole on the portion where a contact is to be formed; (b) forming a metal layer on the whole surface of the substrate, and implanting positive ions into the metal layer; and (c) heat-treating the whole substrate so as to form a silicide layer. The metals used are those which can react with silicon to form a silicide, and may be selected from high melting point metals including Co, Ti, Ta, Ni, Mo, and Hf. The ions used are ions including H+ or halogen element ions, and a heat treatment is carried out so that the implanted positive ions may spread on/in the grain boundaries, or that the positive ions may bond with dangling bonds. Further, a silicidation heat treatment is carried out so that the silicide would be formed on the portion where the metal and the silicon substrate contact together. These heat treatments may be carried out simultaneously. The heat treatment for the spreading of the positive ions is carried out at a low temperature of about 300.degree.-500.degree. C., while the heat treatment of the silicidation reaction is carried out at a proper temperature depending on the metal used.
REFERENCES:
patent: 4998157 (1991-03-01), Yokoyama et al.
patent: 5024954 (1991-06-01), Chen et al.
patent: 5217924 (1993-06-01), Rodder et al.
patent: 5254495 (1993-10-01), Luv et al.
patent: 5258329 (1993-11-01), Shibata
patent: 5536676 (1996-07-01), Cheng et al.
Bilodeau Thomas G.
LG Semicon Co. Ltd.
Niebling John
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