Process for formation of a self aligned titanium nitride/cobalt

Details Process for formation of a self aligned titanium nitride/cobalt Process for formation of a self aligned titanium nitride/cobalt

1990-06-08

1991-09-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437201, 437192, 437178, 437190, 148DIG147, H01L 2144

Patent

active

050473670

ABSTRACT:
A process for the formation of a titanium nitride/cobalt silicide bilayer for use in semiconductor processing. Titanium and then cobalt are deposited on a silicon substrate by sputter deposition techniques. The substrate is then annealed. During this process the titanium first cleans the silicon surface of the substrate of any native oxide. During the anneal, the titanium diffuses upward and the cobalt diffuses downward. The cobalt forms a high quality epitaxial cobalt silicide layer on the silicon substrate. The titanium layer diffuses upward to the surface of the bilayer. The anneal is carried out in a nitrogen or ammonia ambient, so that a titaniun nitride layer is formed. The resulting structure can be used in self aligned silicide technology, as a contact fill material for contact to electrical regions of the device, and as a diffusion barrier preventing the diffusion of aluminum from a subsequently deposited aluminum layer or the diffusion of dopants from a subsequently grown doped selective silicon layer into the silicon substrate.

REFERENCES:
patent: 4206540 (1980-06-01), Gould
patent: 4378628 (1983-04-01), Levinstein et al.
patent: 4398344 (1983-08-01), Gould
patent: 4864378 (1989-09-01), Tsaur
patent: 4931353 (1990-06-01), Tanielian
Novel Submicron MOS Devices by Self-Aligned Nitridation of Silicide; Kaneko et al.; 1985 IEEE; pp. 208-211.
Cobalt Silicide Interconnection from a Si/Uv/Lo Trilayer Structure; Lin et al.; J. Electrochem. Soc. vol. 136, No. 1; 1/89.

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