Process for filling recessed features in a dielectric substrate

Details Process for filling recessed features in a dielectric substrate Process for filling recessed features in a dielectric substrate

2011-08-02

2011-08-02

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S637000, C438S638000, C438S672000, C438S673000, C206S123000, C206S157000, C206S291000

Reexamination Certificate

active

07989347

ABSTRACT:
A process for filling recessed features of a dielectric substrate for a semiconductor device, comprises the steps (a) providing a dielectric substrate having a recessed feature in a surface thereof, wherein the smallest dimension (width) across said feature is less than ≦200 nm, a conductive layer being present on at least a portion of said surface, (b) filling said recessed feature with a conductive material, and (c) prior to filling said recessed feature with said conductive material, treating said surface with an accelerator.

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