Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-11-14
2008-12-30
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE29130
Reexamination Certificate
active
07470570
ABSTRACT:
A method of fabricating a plurality of FinFETs on a semiconductor substrate in which the gate width of each individual FinFET is defined utilizing only a single etching process, instead of two or more, is provided. The inventive method results in improved gate width control and less variation of the gate width of each individual gate across the entire surface of the substrate. The inventive method achieves the above by utilizing a modified sidewall image transfer (SIT) process in which an insulating spacer that is later replaced by a gate conductor is employed and a high-density bottom up oxide fill is used to isolate the gate from the substrate.
REFERENCES:
patent: 7074662 (2006-07-01), Lee et al.
patent: 7098498 (2006-08-01), Diorio et al.
patent: 7105934 (2006-09-01), Anderson et al.
patent: 7148526 (2006-12-01), An et al.
patent: 7214576 (2007-05-01), Kaneko et al.
patent: 7224029 (2007-05-01), Anderson et al.
Yan, Ran-Hong et al., “Scaling the Si MOSFET: From Bulk to SOI to Bulk,” IEEE Trans. Elec. Dev., Jul. 1992, 1704-1710, vol. 39, No. 7.
Park, T. et al., “Fabrication of Body-Tied FinFETs (Omega MOSFETs) Using Bulk Si Wafers,” Symp. VLSI Tech. Dig. Tech. Pap., 2003, 135-136.
Beintner Jochen
Bronner Gary B.
Divakaruni Ramachandra
Li Yu-jun
International Business Machines - Corporation
Le Thao P.
Scully , Scott, Murphy & Presser, P.C.
Tuchman Ido
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