Process for fabricating ultra-low contact resistances in...

Details Process for fabricating ultra-low contact resistances in... Process for fabricating ultra-low contact resistances in...

2005-05-24

2005-05-24

Brock, II, Paul E (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S605000, C438S610000, C438S652000, C438S658000, C438S666000

Reexamination Certificate

active

06897137

ABSTRACT:
A process for fabricating ohmic contacts in a field-effect transistor includes the steps of: thinning a semiconductor layer forming recessed portions in the semiconductor layer; depositing ohmic contact over the recessed portions; and heating the deposited ohmic contacts. The field-effect transistor comprises a layered semiconductor structure which includes a first group III nitride compound semiconductor layer doped with a charge carrier, and a second group III nitride compound semiconductor layer positioned below the first layer, to generate an electron gas in the structure. After the heating step the ohmic contacts communicate with the electron gas. As a result, an excellent ohmic contact to the channel of the transistor is obtained.

REFERENCES:
patent: 5696389 (1997-12-01), Ishikawa et al.
patent: 5760418 (1998-06-01), Lee et al.
patent: 5766695 (1998-06-01), Nguyen et al.
patent: 6100548 (2000-08-01), Nguyen et al.
patent: 6391696 (2002-05-01), Onda
patent: 6492669 (2002-12-01), Nakayama et al.
patent: 20010013604 (2001-08-01), Hase
patent: 20040021152 (2004-02-01), Nguyen et al.
patent: 20040029330 (2004-02-01), Nguyen et al.
patent: 0 899 782 (1999-03-01), None
patent: 2002016087 (2002-01-01), None
patent: 0113436 (2001-02-01), None
patent: 0157929 (2001-08-01), None

Affiliated with

Also associated with

Rating

Process for fabricating ultra-low contact resistances in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating ultra-low contact resistances in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating ultra-low contact resistances in... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3439205