Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1995-10-19
1998-03-17
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
1566621, 437228, 437947, 437981, H01L 21306
Patent
active
057282595
ABSTRACT:
Disclosed herein is a process for fabricating a thin-film semiconductor device which includes (1) a step of etching a silicon film by wet etching or gas etching, the former employing a liquid containing hydrazine or ethylene diamine, the latter employing chlorine fluoride, thereby forming an island-like silicon semiconductor region having inclined edges, and (2) a step of forming thereon a gate insulating film by plasma-free process such as heated CVD. The process yields the island-like silicon region and gate insulating film completely free from plasma-induced damage. This reduces the leakage current between the source and drain (which is due to plasma-induced damage) and prevents the degradation of characteristic properties.
REFERENCES:
patent: 3936331 (1976-02-01), Luce et al.
patent: 4056414 (1977-11-01), Kopp
patent: 4937808 (1990-06-01), Shimada et al.
patent: 5326406 (1994-07-01), Kaneko et al.
patent: 5393682 (1995-02-01), Liu
patent: 5406109 (1995-04-01), Whitney
patent: 5489542 (1996-02-01), Iwai et al.
patent: 5545571 (1996-08-01), Yamazaki et al.
Hamatani Toshiji
Suzawa Hideomi
Takemura Yasuhiko
Yamazaki Shunpei
Alanko Anita
Breneman R. Bruce
Manzo Edward D.
Murphy Mark J.
Semiconductor Energy Laboratory, Ltd.
LandOfFree
Process for fabricating thin-film semiconductor device without p does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for fabricating thin-film semiconductor device without p, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating thin-film semiconductor device without p will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-954568