Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1993-12-22
1995-02-28
Thomas, Tom
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
437 5, 437241, 437978, 148DIG135, B44C 122
Patent
active
053933753
ABSTRACT:
A process for fabricating submicron movable mechanical structures utilizes chemically assisted ion beam etching and reactive ion etching which are independent of crystal orientation. The process provides released mechanical structures which may be of the same material or of different materials than the surrounding substrate, and a nitride coating may be provided on the released structure for optical applications.
REFERENCES:
patent: 3383760 (1968-05-01), Shwartzman
patent: 3859178 (1975-01-01), Logan et al.
patent: 4417946 (1983-11-01), Bohlen et al.
patent: 4437226 (1984-03-01), Soclof
patent: 4561932 (1985-12-01), Gris et al.
patent: 4670092 (1987-06-01), Motamedi
patent: 4776924 (1988-10-01), Delapierre
patent: 4814287 (1989-03-01), Takemoto et al.
patent: 4845048 (1989-07-01), Tamaki et al.
patent: 5072288 (1991-12-01), MacDonald et al.
patent: 5112771 (1992-05-01), Ishii et al.
patent: 5156988 (1992-10-01), Mori et al.
patent: 5198390 (1993-03-01), MacDonald et al.
"Fabrication of High Frequency Two-Dimensional Nanoactuators for Scanned Probe Devices" J. Jason Yao et al, Journal of Microelectromechanical Systems, vol. 1, No. 1, Mar. 1992 pp. 14-22.
"Formation of Submicron Silicon-on-Insulator Structures by Lateral Oxidation of Substrate-Silicon Islands" Susanne Arney et al, J. Vac. Sci. Technol. B6(1), Jan./Feb. 1988, pp. 341-345.
"New SOI CMOS Process with Selective Oxidation" Kubota et al, IEDM 86 pp. 814-816.
"Anisotropic Reactive Ion Etching of Aluminum Using Cl.sub.2 BCl.sub.3, and CH.sub.4 Gases" Lutze et al, J. Electrochem. Soc., vol. 137, No. 1, Jan. 1990 pp. 249-252.
"Anistropic Reactive Ion Etching of MoSi.sub.2 and In Situ Doped n.sup.+ and p.sup.+ Polysilicon Using Cl.sub.2 and BCl.sub.3 " Mele et al J. Electrochem. Soc.: Solid-State Science and Tech Sep. 1988 pp. 2373-2378.
"Nanostructures in Motion" J. J. Yao et al Invited Paper International Symposium on Nanostructures and Mesoscopic Systems, NANOMES '91, Sante Fe, N.M., May 20-24, 1991 9 pages.
MacDonald Noel C.
Porkolab Gyorgy A.
Zhang Zhoying L.
Cornell Research Foundation Inc.
Thomas Tom
Trinh Michael
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