Process for fabricating SOI substrate with high-efficiency recov

Details Process for fabricating SOI substrate with high-efficiency recov Process for fabricating SOI substrate with high-efficiency recov

1998-04-06

2000-08-29

Bowers, Charles

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

438407, 438423, 438DIG967, H01L 21324, H01L 2126

Patent

active

061108456

ABSTRACT:
First, oxygen ions of a high concentration are implanted into a silicon substrate 1, by which a high-concentration oxygen implanted layer 3 is formed. Subsequently, a heat treatment for about 4 hours at 1350.degree. C. is carried out in an atmosphere of Ar with a 0.5% concentration oxygen for the formation of a buried oxide layer 5. Next, pulse laser annealing is performed for melting and recrystallization of the surface silicon layer. Pulsed laser beam is radiated at an energy density of 1200 mJ/cm.sup.2 or more. The pulsed laser beam is able to melt the semiconductor surface in several 10's nsec by virtue of its extremely large power density in irradiation of 10.sup.7 W/cm.sup.2. By iterating this pulse laser annealing, the surface silicon layer iterates to melt and recrystallize, activating the activities of crystal defects, by which damage recovery based on crystal seeds is accomplished.

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