Process for fabricating SOI substrate

Details Process for fabricating SOI substrate Process for fabricating SOI substrate

1996-11-13

1999-01-26

Breneman, R. Bruce

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

216 20, 216 36, 216 53, 216 57, 216 79, 438690, 438704, 438734, 438977, H01L 21302

Patent

active

058638296

ABSTRACT:
The present invention provides a process for fabricating an SOI substrate with no peripheral scratches and with enhanced fabrication efficiency. The present process includes bonding a semiconductor wafer of an active substrate 1 and a semiconductor base wafer 2 to form a bonded wafer 4; surface-grinding the active substrate 1; spin etching the surface-ground active substrate 1; and PACE processing the etched active substrate 1 to form the active substrate into a thin film and simultaneously, to remove the non-bonded peripheral portion of the bonded wafer 4.

REFERENCES:
patent: 5032544 (1991-07-01), Ito et al.
patent: 5233218 (1993-08-01), Miura
patent: 5258323 (1993-11-01), Sarma et al.
patent: 5494849 (1996-02-01), Iyer et al.
patent: 5668045 (1997-09-01), Golland et al.

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