Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1974-09-24
1976-05-11
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
156610, 156612, 156613, 252 623C, 423345, 423346, H01L 21205, C01B 3136
Patent
active
039560325
ABSTRACT:
Sections are cut from a SiC platelet such that the sections have a-faces parallel to the c-axis of the SiC platelet. The sections serve as substrates for the growth of SiC layers by attaching the substrates to a body which is then placed in a chamber and the chamber evacuated. Hydrogen is then admitted, and the body on which the substrates are mounted is heated to produce a temperature profile such that the subsequent admission of a carbon containing chlorosilane gas or a mixture of a chlorosilane gas and a hydrocarbon gas will cause free silicon to be deposited at one end of the body while SiC crystals grow on the substrates which are in a preferred temperature range. Dopant gases, either p-type or n-type, can be admitted with the chlorosilane or hydrocarbon gas to produce the desired type of semiconductor.
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patent: 3527626 (1970-09-01), Brander
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Golightly et al., "Some Aspects of Disorder in Silicon Carbide," Mat. Res. Bull., Vol. 4, 1969, pp. 5119-5128.
Knippenberg et al., "Growth Mechanisms of Silicon Carbide . . . . Deposition," Textbook - Silicon Carbide-1973, Ed., Marshall et al., pp. 92-107.
Weiss et al., "Chemically Vapor Deposited SiC . . . . Applications," Textbook- Silicon Carbide-1973, Ed., Marshall et al., pp. 80-91.
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Powell J. Anthony
Will Herbert A.
Mackin J. A.
Manning J. R.
Musial N. T.
Rutledge L. Dewayne
Saba W. G.
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