Process for fabricating semiconductor device with shallow p-type

Details Process for fabricating semiconductor device with shallow p-type Process for fabricating semiconductor device with shallow p-type

1995-08-14

1999-01-26

Niebling, John

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438528, H01L 21265

Patent

active

058638318

ABSTRACT:
A semiconductor having at least one p-channel transistor (10) with shallow p-type doped source/drain regions (16 and 18) which contain boron implanted into the doped regions (16 and 18) in the form of a compound which consists of boron and an element (or elements) selected from the group which consists of element of substrate (21) and elements which forms a solid solution with the substrate (21). In particular, in the case of silicon substrate, the compound may comprise BSi2, B2Si, B4Si and B6Si. The use of such compounds enables the highly reliable contacts to be formed on the p-doped regions.

REFERENCES:
patent: 5073507 (1991-12-01), Keller
patent: 5126278 (1992-06-01), Kodaira
patent: 5254484 (1993-10-01), Hefner et al.
patent: 5489550 (1996-02-01), Moslehi
patent: 5508208 (1996-04-01), Sato

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