Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1997-12-17
2000-04-18
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
H01L 2900
Patent
active
060518707
ABSTRACT:
A semiconductor structure includes a substrate, a microelectronic device formed on the substrate, and a dielectric layer including silicon dioxide formed over the microelectronic device. The silicon dioxide layer is doped with phosphorous in the form of approximately 96% SiO.sub.2 and 4% phosphorous (PH.sub.3) by weight, and has high etch selectivity, polish rate and gettering capability as well as excellent step coverage. The present process also improves uniformity and process control because phosphine is a gas and does not have to be vaporized prior to deposition.
REFERENCES:
patent: 5729043 (1998-03-01), Shepard
Wolf, Silicon Processing for VLSI Era vol. 2, pp. 196-197, 1990.
Advanced Micro Devices
Alexander David G.
Meier Stephen D.
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