Process for fabricating semiconductor device

Details Process for fabricating semiconductor device Process for fabricating semiconductor device

2005-04-26

2005-04-26

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from gaseous state combined with preceding...

C438S526000, C438S906000, C438S907000, C438S913000

Reexamination Certificate

active

06884701

ABSTRACT:
A process for fabricating a semiconductor device having a buried layer comprises the steps of implanting an impurity ion into where the buried layer to be formed in a substrate, providing the substrate inside a reactor furnace, preparing a nonoxidizing atmosphere inside of the reactor furnace, annealing the substrate to activate and diffuse the implanted impurity ion region while increasing inside temperature of the reactor furnace up to a first temperature, and shifting the inside temperature of the reactor furnace from the first temperature to a second temperature in which a epitaxial crystal starts to grow and introducing a epitaxial growth gas into the reactor furnace to grow an epitaxial layer on a surface of the substrate.

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