Process for fabricating semiconductor and process for fabricatin

Details Process for fabricating semiconductor and process for fabricatin Process for fabricating semiconductor and process for fabricatin

1995-06-07

1998-12-01

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

Using heat

117 9, 117930, C30B 110

Patent

active

058432256

ABSTRACT:
A process for fabricating a semiconductor at a lower crystallization temperature and yet at a shorter period of time, which comprises forming an insulator coating on a substrate; exposing said insulator coating to a plasma; forming an amorphous silicon film on said insulator coating after its exposure to said plasma; and heat treating said silicon film in the temperature range of from 400.degree. to 650.degree. C. or at a temperature not higher than the glass transition temperature of the substrate. The nucleation sites are controlled by selectively exposing the amorphous silicon film to a plasma or by selectively applying a substance containing elements having a catalytic effect thereto. A process for fabricating a thin film transistor using the same is also disclosed.

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