Metal working – Piezoelectric device making
Reexamination Certificate
2011-08-30
2011-08-30
Tugbang, A Dexter (Department: 3729)
Metal working
Piezoelectric device making
C029S890100
Reexamination Certificate
active
08006357
ABSTRACT:
In a production method of a piezoelectric element, an unneeded electric field is prevented from being applied to a piezoelectric thin film layer during the production process, resulting in a high performance piezoelectric element production method. The production method includes a first process for depositing an under electrode layer, a piezoelectric thin film layer and an upper electrode layer successively on a substrate such that the under electrode layer and the upper electrode layer form a short-circuit, a second process, after the first process, for etching including dry etching, the second process commenced while the under electrode layer and the upper electrode layer are short-circuited, a third process, after the second process, for polarizing by applying a voltage across the under electrode layer and the upper electrode layer, a fourth process, after the third process, for individualizing each piezoelectric element.
REFERENCES:
patent: 3909924 (1975-10-01), Vindasius et al.
patent: 6308554 (2001-10-01), Mattes et al.
patent: 6367133 (2002-04-01), Ikada et al.
patent: 7497962 (2009-03-01), Tokunaga
patent: 7665196 (2010-02-01), Lee et al.
patent: 2004/0026362 (2004-02-01), Nakatani
patent: 2005/0190241 (2005-09-01), Lee et al.
patent: 2010/0125988 (2010-05-01), Nakamura et al.
patent: 54-032268 (1979-03-01), None
patent: 09-214271 (1997-08-01), None
patent: 10-104387 (1998-04-01), None
patent: 2000-091656 (2000-03-01), None
patent: 2003-298137 (2003-10-01), None
patent: 2003-347303 (2003-12-01), None
International Search Report for application No. PCT/JP2006/302619 dated Apr. 18, 2006.
Komaki Kazuki
Murashima Yuji
Nakamura Yuki
Yasumi Masahiro
Angwin David
Panasonic Corporation
RatnerPrestia
Tugbang A Dexter
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