Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2006-10-31
2006-10-31
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S041000, C216S096000, C216S099000, C438S052000, C257S415000
Reexamination Certificate
active
07128843
ABSTRACT:
A process for fabricating monolithic membrane structures having air gaps is disclosed, comprising the steps of: providing a wafer; depositing and patterning a protective layer on the wafer; providing a trench in the wafer; depositing and patterning a metal in the trench; depositing and patterning a sacrificial layer on the metal; depositing and patterning a membrane pad on the sacrificial layer; providing a polymeric film on the protective layer and sacrificial layer, wherein part of the polymeric film has a tensile stress; and releasing part of the polymeric film from the protective layer and sacrificial layer, wherein the tensile stress of a portion of the polymeric film releases the portion of the polymeric film from the wafer and generates the air gap.
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Ahmed Shamim
HRL Laboratories LLC
Ladas & Parry LLP
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