Process for fabricating materials for ferroelectric, high dielec

Details Process for fabricating materials for ferroelectric, high dielec Process for fabricating materials for ferroelectric, high dielec

1993-11-18

1995-11-21

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 82, 117 64, H01L 2120, H01L 21324

Patent

active

054686792

ABSTRACT:
A precursor comprising a medium-length ligand carboxylate, such as a metal 2-ethylhexanoate, in a xylenes solvent is applied to an integrated circuit wafer. The wafer is baked to dry the precursor, annealed to form a layered superlattice material on the wafer, then the integrated circuit is completed.

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