Process for fabricating low leakage current electrode for LPCVD

Details Process for fabricating low leakage current electrode for LPCVD Process for fabricating low leakage current electrode for LPCVD

1996-04-30

1999-07-27

Mach, D. Margaret M.

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

438240, 438393, 438396, 438653, 438656, 438785, H01L 21302

Patent

active

059305843

ABSTRACT:
A process for fabricating electrodes for the capacitor dielectric of semiconductor memory devices with low leakage current characteristics is disclosed. The process comprises the steps of first depositing a titanium oxide film over a semiconductor silicon substrate. The deposited titanium oxide film is then annealed. A layer of tungsten nitride top electrode is then deposited on the annealed titanium oxide film. A second annealing procedure is then conducted to simulate post electrode high temperature process.

REFERENCES:
patent: 5189503 (1993-02-01), Suguro
patent: 5418388 (1995-05-01), Okudaira
patent: 5714402 (1998-02-01), Choi

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