Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-05-05
1999-11-16
Wilczewski, Mary
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438163, 438305, 438231, 438595, H01L 21336, H01L 218238, H01L 2184
Patent
active
059857013
ABSTRACT:
A process reduced in mask steps for use in the fabrication of a thin film transistor having an LDD structure, comprising anodically oxidizing a gate electrode of a thin film transistor and performing ion implantation using the thus formed anodic oxide film as the mask. Also claimed is a similar process for fabricating a p-channel transistor and an n-channel transistor on a single substrate, comprising performing ion implantation of an impurity of the first conductive type to both of the transistor regions by using the anodic oxide film as a mask, and then performing ion implantation of an impurity of the second conductive type while masking one of the transistor regions with a resist.
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Ohori Tatsuya
Takei Michiko
Uochi Hideki
Zhang Hongyong
Semiconductor Energy Labaratory Co., Ltd.
Wilczewski Mary
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