Process for fabricating integrating circuits

Details Process for fabricating integrating circuits Process for fabricating integrating circuits

1994-11-03

1997-04-01

Trinh, Michael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438685, H01L 21441

Patent

active

056165188

ABSTRACT:
Integrated circuits employing titanium nitride are significantly improved by using a specific method for formation of the titanium nitride in the device fabrication. In particular, a plasma such as one formed in an electron cyclotron resonance apparatus is employed to dissociate a source of nitrogen and a source of hydrogen and the dissociation products are combined at the integrated circuit deposition substrate with titanium tetrachloride. The resulting deposition is essentially devoid of chlorine and has advantageous step-coverage properties.

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