Process for fabricating GaAs FET with ion implanted channel laye

Details Process for fabricating GaAs FET with ion implanted channel laye Process for fabricating GaAs FET with ion implanted channel laye

1982-12-27

1984-10-02

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 148 15, 148189, H01L 21324

Patent

active

044739397

ABSTRACT:
There is herein described a process for fabricating GaAs FETs with an ion implanted channel layer wherein an ion implanted substrate is capless annealed under an arsine overpressure, and a relatively shallow portion of the outer surface of the substrate in the active layer is removed for the deposition of a gate metallic electrode.

REFERENCES:
patent: 4058413 (1977-11-01), Welch et al.
patent: 4244097 (1981-01-01), Cleary
patent: 4265934 (1981-05-01), Ladd
patent: 4357180 (1982-11-01), Molnar
patent: 4383869 (1983-05-01), Liu
patent: 4396437 (1983-08-01), Kwok et al.
Kasahara et al., "Capless Anneal of Ion-Implanted GaAs in Controlled Arsenic Vapor, J. Appl. Phys., 50 (1), Jan. 1979, pp. 541-543.

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