Process for fabricating electronic circuits with anodically oxid

Details Process for fabricating electronic circuits with anodically oxid Process for fabricating electronic circuits with anodically oxid

1996-05-28

1998-11-03

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438595, 438635, 438688, 438768, H01L 213215

Patent

active

058307869

ABSTRACT:
A process for fabricating an electronic circuit by oxidizing the surroundings of a metallic interconnection such as of aluminum, tantalum, and titanium, wherein anodic oxidation is effected at a temperature not higher than room temperature, preferably, at 10.degree. C. or lower, and more preferably, at 0.degree. C. or lower. The surface oxidation rate of a metallic interconnection can be maintained constant to provide a surface free of irregularities.

REFERENCES:
patent: 3639221 (1972-02-01), Dorsey
patent: 4005452 (1977-01-01), Cook
patent: 4161430 (1979-07-01), Sogo
patent: 4415606 (1983-11-01), Cynkar
patent: 4526660 (1985-07-01), Garriga
patent: 4548682 (1985-10-01), Yoshida et al.
patent: 4561009 (1985-12-01), Yonezawa et al.
patent: 4645734 (1987-02-01), Takada et al.
patent: 4681657 (1987-07-01), Hwang et al.
patent: 5187499 (1993-02-01), Murakami
patent: 5289030 (1994-02-01), Yamazaki et al.
patent: 5300209 (1994-04-01), Mori
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5326712 (1994-07-01), Bae
patent: 5359206 (1994-10-01), Yamamoto et al.
patent: 5541007 (1996-07-01), Ueda et al.
patent: 5580800 (1996-12-01), Zhang et al.
I.N. Ganiev, et al., Soviet J. Appl. Chem., 60, 9 (1987) 2119, "Anodic behavior of Al:Sc(Y,Pr,Nd)", Sep. 1987.
V.A. Sokol, et al., Belarus Academy of Sciences News, 4(1988) 106 "Formation of anodic oxide films on Al containing rare earth metals", Apr. 1988.
Translation of JP 57-101695, Jun. 1982.
S. Wolf & R.N. Tauber, "Silicon Processing for the VLSI Era" Lattice Press, 1986 pp. 332-334, pp. 428-430, 434-437, 452-453 no month.
Translation of JP 52-38496.
Abstract of Labunov et al., Dokl, Akad. Nauk BSSR (1984), 28(3), pp. 215-218, "Characteristics of the Introduction of Electrolyte Anions into an Oxide Gilm on Aluminum" no month.
Abstract of Sokol et al., Vesti Akad. Navuk BSSR, Ser.. Fiz.-Tekh. Navuk (1988), (4), pp. 106-110, "Formation of Anodic Oxide Films on Aluminum Containing Rare Earth Metals" no month.
Abstract of Ganiev et al., Zh. Prikl. Khim. (Leningrad) (1985), 58(10), pp. 2366-2368, "Effect of Lanthanum Additions on the Anodic Behavior of Aluminum in the Neutral Medium" no month.
Abstract of Ganiev et al., J. Appl. Chem. USSR, 60.9 (1987) 2119 :Anodic Behavior of Aluminum, Scandium, (Yttrium, Praeseodymium, Neodymium) Alloys in a Neutral Medium no month.
H. Tsutsu et al., 1992 Proc. Electrochemical Soc. (TFT Symp) p. 138, "A Novel Tapered Etching Technology of AL-2%Si Alloy" no month.
S. Wolf et al., "Silicon Processing for the VLSI ERA", 1986, pp. 531-532 & 534-535, vol. 1 no month.

Affiliated with

Also associated with

Rating

Process for fabricating electronic circuits with anodically oxid does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating electronic circuits with anodically oxid, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating electronic circuits with anodically oxid will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-688693