Process for fabricating DRAM capacitor

Details Process for fabricating DRAM capacitor Process for fabricating DRAM capacitor

1998-03-12

1999-08-10

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438255, H01L 2120

Patent

active

059373075

ABSTRACT:
A process of fabricating the storage capacitor of a DRAM memory IC device having increased electrode surface area is disclosed. The hemispherical-grain silicon layer used to effect the area increase does not suffer stripping-off during the process of removal of its native oxide. The prevention of the stripping-off is achieved by the employment of a amorphous silicon layer underlying the hemispherical-grain silicon layer. The amorphous silicon layer improves the adhesiveness of the hemispherical-grain silicon layer, thereby preventing its stripping-off.

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