Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-02-06
2007-02-06
Nguyen, Cuong (Department: 2811)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S619000, C438S624000
Reexamination Certificate
active
10781565
ABSTRACT:
A process for fabricating an integrated electronic circuit comprises the formation of at least one air gap between interconnect elements above only a defined portion of a surface of a substrate, within an interconnect layer. The interconnect layer comprises a sacrificial material and extends beneath an intermediate layer of permeable material. The air gap is formed by removal, through the intermediate layer, of at least part of the sacrificial material by bringing the permeable material into contact with an agent for removing the sacrificial material, to which agent the permeable material is resistant.
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Arnal Vincent
Gosset Laurent
Torres Joaquin
Koninklijke Philips Electronics , N.V.
Nguyen Cuong
STMicroelectronics SA
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