Process for fabricating a wiring layer of aluminum or aluminum a

Details Process for fabricating a wiring layer of aluminum or aluminum a Process for fabricating a wiring layer of aluminum or aluminum a

1984-04-10

1985-10-15

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156651, 156656, 1566591, 156665, 156345, 204192E, 252 791, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

045472602

ABSTRACT:
In the fabrication of an aluminum or aluminum alloy wiring layer on a semiconductor device by dry etching using a gas containing chlorine species, a plasma exposure step inserted into the dry etching process in order to avoid the problems due to using a chlorine radical etchant. One half thickness of the aluminum layer, which is selectively masked by a resist mask film, on a semiconductor substrate is etched by a reactive ion etching technique using an etchant gas composed of CCl.sub.4 +BCl.sub.3, and then exposed to a plasma of a gas composed of CF.sub.4 +O.sub.2 generated by RF power. After the plasma exposure, the remaining thickness of the aluminum film is etched off under the same conditions as in the preceeding reactive ion etching. As the result, the amount of side etching is reduced to one half that of the case without the plasma exposure step, and corrosion originating from aluminum chlorides, products of the reactive ion etching, is eliminated. And further, the residual polysilicon layer, which is usually formed when Al-Si film is etched by using a gas containing chlorine as a reactive species, is also reduced.

REFERENCES:
patent: 4267013 (1981-05-01), Iida et al.
patent: 4325984 (1982-04-01), Galfo et al.
patent: 4380488 (1983-04-01), Reichelderfer
patent: 4412885 (1983-11-01), Wang et al.

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