Process for fabricating a uniform gate oxide of a vertical trans

Details Process for fabricating a uniform gate oxide of a vertical trans Process for fabricating a uniform gate oxide of a vertical trans

1999-11-30

2000-11-21

Bowers, Charles

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257296, 257301, 438105, 438931, 438238, H01L 27108

Patent

active

061506702

ABSTRACT:
A process for fabricating a gate oxide of a vertical transistor. In a first step, a trench is formed in a substrate, the trench extending from a top surface of the substrate and having a trench bottom and a trench side wall. The trench side wall comprises a <100> crystal plane and a <110> crystal plane. Next, a sacrificial layer having a uniform thickness is formed on the trench side wall. Following formation of the sacrificial layer, nitrogen ions are implanted through the sacrificial layer such that the nitrogen ions are implanted into the <110> crystal plane of the trench side wall, but not into the <100> crystal plane of the trench side wall. The sacrificial layer is then removed and the trench side wall is oxidized to form the gate oxide.

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